Damage sensitivity, a characteristic parameter in the study of ionizing radiation damage equivalence in CMOS devices, is a complex function of total dose, dose rate, radiation source, particle energy, supply voltage, gate bias and transistor type. 损伤敏感性是CMOS器件的电离辐射损伤等效研究中的一个特征参量,这个参量是辐照总剂量、剂量率、辐射类型、能量、管子类型、偏置条件、电源电压等的复杂函数。
It indicates that ionizing rate of gas in the electronic field is high and the activated particle concentration is high too. 说明电场内气体电离率高,活性粒子浓度高。